Precise in situ etch depth control of multilayered III−V semiconductor samples with reflectance anisotropy spectroscopy (RAS) equipment

• Ann-Kathrin Kleinschmidt,
• Lars Barzen,
• Johannes Strassner,
• Christoph Doering,
• Henning Fouckhardt,
• Wolfgang Bock,
• Michael Wahl and
• Michael Kopnarski

Beilstein J. Nanotechnol. 2016, 7, 1783–1793, doi:10.3762/bjnano.7.171

• Institut für Oberflächen- und Schichtanalytik (IFOS) GmbH, Trippstadter Str. 120, D-67663 Kaiserslautern, Germany 10.3762/bjnano.7.171 Abstract Reflectance anisotropy spectroscopy (RAS) equipment is applied to monitor dry-etch processes (here specifically reactive ion etching (RIE)) of monocrystalline

• sample in order to make RAS control possible. Keywords: broad area semiconductor lasers (BAL); dry-etch monitoring (RIE); precise etch depth control; reflectance anisotropy spectroscopy (RAS); III–V semiconductors; Introduction Reflectance anisotropy/difference spectroscopy (RAS/RDS) [1][2][3][4][5] is

• -known for different etch parameters.) Thus with this highly etch-depth sensitive process a real benefit of on-line control is illustrated. Conclusion Reflectance anisotropy spectroscopy (RAS) can be used to monitor monocrystalline III–V semiconductor sample surfaces in situ during reactive ion etching